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IRFPS35N50L smps mosfet hexfet power mosfet v dss r ds(on) typ. i d 500v 0.125 ? 34a benefits applications switch mode power supply (smps) uninterruptible power supply high speed power switching zvs and high frequency circuit pwm inverters low gate charge qg results in simple drive requirement improved gate, avalanche and dynamic dv/dt ruggedness fully characterized capacitance and avalanche voltage and current low trr and soft diode recovery high performance optimised anti-parallel diode pd- 94227 5/15/02 www.irf.com 1 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 34 i d @ t c = 100c continuous drain current, v gs @ 10v 22 a i dm pulsed drain current 140 p d @t c = 25c power dissipation 450 w linear derating factor 3.6 w/c v gs gate-to-source voltage 30 v dv/dtpeak diode recovery dv/dt 11 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings typical smps topologies bridge converters all zero voltage switching s d g diode characteristics t rr reverse recovery time q rr reverse recovery charge ns symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 34 mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 140 integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.5 v t j = 25c, i s = 34a, v gs = 0v ??? 170 250 t j = 25c i f = 34a ??? 220 330 t j = 125c di/dt = 100a/s ??? 670 1010 nc t j = 25c ??? 1.5 2.2 ct j = 125c i rrm reverse recovery current ??? 8.5 ??? a t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) super-247?

2 www.irf.com symbol parameter min. typ. max. units conditions g fs forward transconductance 18 ??? ??? s v ds = 50v, i d = 20a q g total gate charge ??? ??? 230 i d = 34a q gs gate-to-source charge ??? ??? 65 nc v ds = 400v q gd gate-to-drain ("miller") charge ??? ??? 110 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 24 ??? v dd = 250v t r rise time ??? 100 ??? i d = 34a t d(off) turn-off delay time ??? 42 ??? r g = 1.2 ? t f fall time ??? 42 ??? v gs = 10v,see fig. 10 c iss input capacitance ??? 5580 ??? v gs = 0v c oss output capacitance ??? 590 ??? v ds = 25v c rss reverse transfer capacitance ??? 58 ??? pf ? = 1.0mhz, see fig. 5 c oss output capacitance ??? 7290 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 160 ??? v gs = 0v, v ds = 400v, ? = 1.0mhz c oss eff. effective output capacitance ??? 320 ??? v gs = 0v, v ds = 0v to 400v dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 500 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.12 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 0.125 0.145 ? v gs = 10v, i d = 20a v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = v gs , i d = 250a ??? ??? 50 a v ds = 500v, v gs = 0v ??? ??? 2.0 ma v ds = 400v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) i sd 34a, di/dt 510a/s, v dd v (br)dss , t j 150c. starting t j = 25c, l = 0.97mh, r g = 25 ? , i as = 34a (see figure 12a) pulse width 400s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss symbol parameter typ. max. units e as single pulse avalanche energy ??? 560 mj i ar avalanche current ??? 34 a e ar repetitive avalanche energy ??? 45 mj avalanche characteristics symbol parameter typ. max. units r jc junction-to-case ??? 0.28 r cs case-to-sink, flat, greased surface 0.24 ??? c/w r ja junction-to-ambient ??? 40 thermal resistance

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.01 0.1 1 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 34a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20s pulse width tj = 25c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 40 80 120 160 200 240 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 34a v = 100v ds v = 250v ds v = 400v ds 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 1 10 100 1000 10000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd

www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 5 10 15 20 25 30 35 t , case temperature ( c) i , drain current (a) c d

6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 15a 22a 34a

www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets

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8 www.irf.com super-247? package outline b ? 1.60 [.063] 12 0.25 [.010] b a 3 0.13 [.005] 2.35 [.092] 1.65 [.065] 2.15 [.084] 1.45 [.058] 5.50 [.216] 4.50 [.178] e e 3x 1.60 [.062] 1.45 [.058] 16.10 [.632] 15.10 [.595] 20.80 [.818] 19.80 [.780] 14.80 [.582] 13.80 [.544] 4.25 [.167] 3.85 [.152] 5.45 [.215] 1.30 [.051] 0.70 [.028] 13.90 [.547] 13.30 [.524] 16.10 [.633] 15.50 [.611] 4 0.25 [.010] ba 4 3.00 [.118] 2.00 [.079] a 2x r max. section e-e 2x 1.30 [.051] 1.10 [.044] 3x 1. dimens ioning and t ole rancing per as me y14.5m-1994. 2. dimensions are s hown in millime t ers [inche s] 3. cont r ol l ing dime ns ion: mil l ime t e r not es : 4. out line conf orms t o jedec out line t o-274aa 3 - s ource 2 - drain 1 - gat e 4 - drain 3 - emitter 4 - collector 1 - gat e 2 - collector l e ad as s i gnme nt s mos f e t igbt c data and specifications subject to change without notice. this product has been designed and qua lified for the industria l market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 5/02

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